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GT30N135SRA,S1E

Part No GT30N135SRA,S1E
Manufacturer Toshiba Semiconductor and Storage
Description D-IGBT TO-247 VCES=1350V IC=30A
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:16969 pcs
Quantity Unit Price Ext. Price
1+ $3.321 $332
10+ $3.2546 $1627
100+ $3.1549 $3155
1000+ $3.0553 $3055
10000+ $2.9225 $2923
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Voltage-CollectorEmitterBreakdown(Max)1350 V
SwitchingEnergy-, 1.3mJ (off)
OperatingTemperature175°C (TJ)
ProductStatusActive
Package/Case-
GradeThrough Hole
MountingTypeTO-247
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C-
QualificationTO-247-3
SupplierDevicePackage-
InputTypeStandard
Vce(on)(Max)@Vge120 A
GateCharge270 nC
Current-Collector(Ic)(Max)60 A
Ic2.6V @ 15V, 60A
TestCondition300V, 60A, 39Ohm, 15V
PackageTube
Power-Max348 W
IGBTType-

Introduce

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