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GT30J121(Q)

Part No GT30J121(Q)
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 600V 30A 170W TO3PN
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:3161 pcs
Quantity Unit Price Ext. Price
1+ $3.5643 $356
10+ $3.493 $1747
100+ $3.3861 $3386
1000+ $3.2792 $3279
10000+ $3.1366 $3137
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Voltage-CollectorEmitterBreakdown(Max)600 V
SwitchingEnergyStandard
OperatingTemperatureThrough Hole
ProductStatusActive
Package/Case-
GradeTO-3P-3, SC-65-3
MountingType60 A
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C300V, 30A, 24Ohm, 15V
QualificationTO-3P(N)
SupplierDevicePackage-
InputType-
Vce(on)(Max)@Vge2.45V @ 15V, 30A
GateCharge90ns/300ns
Current-Collector(Ic)(Max)30 A
Ic170 W
TestCondition-
PackageTube
Power-Max1mJ (on), 800µJ (off)
IGBTType-

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