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GT30J65MRB,S1E

Part No GT30J65MRB,S1E
Manufacturer Toshiba Semiconductor and Storage
Description 650V SILICON N-CHANNEL IGBT, TO-
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:24724 pcs
Quantity Unit Price Ext. Price
1+ $2.277 $228
10+ $2.2315 $1116
100+ $2.1631 $2163
1000+ $2.0948 $2095
10000+ $2.0038 $2004
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Voltage-CollectorEmitterBreakdown(Max)650 V
SwitchingEnergyStandard
OperatingTemperatureThrough Hole
ProductStatusActive
Package/Case200 ns
GradeTO-3P-3, SC-65-3
MountingType-
ReverseRecoveryTime(trr)
Current-CollectorPulsed(Icm)-
Series-
Td(on/off)@25°C400V, 15A, 56Ohm, 15V
QualificationTO-3P(N)
SupplierDevicePackage-
InputType70 nC
Vce(on)(Max)@Vge1.8V @ 15V, 30A
GateCharge75ns/400ns
Current-Collector(Ic)(Max)60 A
Ic200 W
TestCondition175°C (TJ)
PackageTube
Power-Max1.4mJ (on), 220µJ (off)
IGBTType-

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