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Buy IPB26CN10NGATMA1 with confidence from Chipdigger.com, 1 Year Warranty
See Product Specifications for product details.
Buy IPB26CN10NGATMA1 with confidence from Chipdigger.com, 1 Year Warranty
IPB26CN10NGATMA1
Part No | IPB26CN10NGATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 100V 35A D2PAK |
Lead Free Status / RoHS Status | Contains lead /RoHS non-compliant |
Specifications
Data sheet
RdsOn(Max)@Id | 4V @ 39µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 31 nC @ 10 V |
FETFeature | 71W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | PG-TO263-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | OptiMOS™ |
Qualification | |
SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 35A (Tc) |
Vgs(Max) | 2070 pF @ 50 V |
MinRdsOn) | 26mOhm @ 35A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Introduce
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