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See Product Specifications for product details.
Buy IPB26CN10NG with confidence from Chipdigger.com, 1 Year Warranty
See Product Specifications for product details.
Buy IPB26CN10NG with confidence from Chipdigger.com, 1 Year Warranty
IPB26CN10NG
| Part No | IPB26CN10NG |
|---|---|
| Manufacturer | Infineon |
| Description | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 |
| Lead Free Status / RoHS Status | Contains lead / RoHS compliant |
Specifications
Data sheet
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 100 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Mount | Surface Mount |
| Fall Time | 3 ns |
| Turn-On Delay Time | 10 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Max Operating Temperature | 175 °C |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation | 71 W |
| Drain to Source Resistance | 26 mΩ |
| Continuous Drain Current (ID) | 35 A |
| Element Configuration | Single |
| Rise Time | 4 ns |
| Turn-Off Delay Time | 13 ns |
| Number of Pins | 3 |
| Number of Elements | 1 |
| Input Capacitance | 2.07 nF |
| Rds On Max | 26 mΩ |
| Case/Package | TO-263 |
| Max Power Dissipation | 71 W |
Introduce
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