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RN1706JE(TE85L,F)

Part No RN1706JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN PREBIAS 0.1W ESV
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

Voltage-CollectorEmitterBreakdown(Max)50V
VceSaturation(Max)@Ib100nA (ICBO)
ProductStatusActive
Package/Case
TransistorType2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Grade
MountingTypeESV
Current-CollectorCutoff(Max)100mW
Series-
DCCurrentGain(hFE)(Min)@Ic80 @ 10mA, 5V
Frequency-TransitionSurface Mount
Qualification
SupplierDevicePackage
Vce300mV @ 250µA, 5mA
Current-Collector(Ic)(Max)100mA
Ic250MHz
PackageCut Tape (CT)
Resistor-Base(R1)4.7kOhms
Power-MaxSOT-553
Resistor-EmitterBase(R2)47kOhms

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