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IPI80N06S3-07

Part No IPI80N06S3-07
Manufacturer Infineon Technologies
Description MOSFET N-CH 55V 80A TO262-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id7768 pF @ 25 V
Vgs(th)(Max)@Id135W (Tc)
Vgs-
FETFeaturePG-TO262-3
DraintoSourceVoltage(Vdss)55 V
OperatingTemperature10V
DriveVoltage(MaxRdsOn6.8mOhm @ 51A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType±20V
InputCapacitance(Ciss)(Max)@VdsThrough Hole
SeriesOptiMOS™
Qualification
SupplierDevicePackage170 nC @ 10 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C80A (Tc)
Vgs(Max)-55°C ~ 175°C (TJ)
MinRdsOn)4V @ 80µA
PackageTube
PowerDissipation(Max)TO-262-3 Long Leads, I2PAK, TO-262AA

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