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IPD25CN10NGBUMA1

Part No IPD25CN10NGBUMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 35A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id4V @ 39µA
Vgs(th)(Max)@Id-
Vgs±20V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureTO-252-3, DPak (2 Leads + Tab), SC-63
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType31 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
SeriesOptiMOS™
Qualification
SupplierDevicePackage2070 pF @ 50 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C35A (Tc)
Vgs(Max)71W (Tc)
MinRdsOn)25mOhm @ 35A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)PG-TO252-3

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