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FDV302P-NB8V001

Part No FDV302P-NB8V001
Manufacturer ON Semiconductor
Description MOSFET Digital FET P-Ch
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):25V
Power Dissipation (Max):350mW (Ta)
Package / Case:TO-236-3, SC-59, SOT-23-3
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:SOT-23
Vgs(th) (Max) @ Id:1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@chipdigger.com
FET Type:P-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Other Names:FDV302P-NB8V001CT FDV302P_NB8V001CT FDV302P_NB8V001CT-ND
Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V
Vgs (Max):-8V
Rds On (Max) @ Id, Vgs:10 Ohm @ 200mA, 4.5V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:0.31nC @ 4.5V
Operating Temperature:-55°C ~ 150°C (TJ)

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