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BSP89E6327

Part No BSP89E6327
Manufacturer Infineon Technologies
Description -
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

Operating Temperature-55u00b0C ~ 150u00b0C (TJ)
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 10 V
Current - Continuous Drain (Id) @ 25u00b0C350mA (Ta)
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id1.8V @ 108u00b5A
Supplier Device PackagePG-SOT223-4
Drain to Source Voltage (Vdss)240 V
SeriesSIPMOSu00ae
Power Dissipation (Max)1.8W (Ta)
Package / CaseTO-261-4, TO-261AA
TechnologyMOSFET (Metal Oxide)
MfrInfineon Technologies
Part StatusObsolete
Vgs (Max)u00b120V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
PackageTape & Reel (TR)

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