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GT090N06S

Part No GT090N06S
Manufacturer Goford Semiconductor
Description N60V,14A,RD<8M@10V,VTH1.0V~2.4V
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:6625 pcs
Quantity Unit Price Ext. Price
1+ $0.0001 $0
10+ $0.0001 $0
100+ $0.0001 $0
1000+ $0.0001 $0
10000+ $0.0001 $0
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Specifications

Data sheet

RdsOn(Max)@Id8mOhm @ 8A, 10V
Vgs(th)(Max)@Id24 nC @ 10 V
Vgs2.4V @ 250µA
FETFeature-
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
OperatingTemperature-55°C ~ 150°C (TJ)
DriveVoltage(MaxRdsOn14A (Tc)
ProductStatus-
Package/Case8-SOIC (0.154, 3.90mm Width)
GateCharge(Qg)(Max)@Vgs-
Grade-
MountingTypeSurface Mount
InputCapacitance(Ciss)(Max)@Vds1378 pF @ 30 V
SeriesTape & Reel (TR)
Qualification
SupplierDevicePackage8-SOP
FETTypeActive
TechnologyN-Channel
Current-ContinuousDrain(Id)@25°C60 V
Vgs(Max)±20V
MinRdsOn)4.5V, 10V
Package4000
PowerDissipation(Max)3.1W (Tc)

Introduce

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