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BSO211P

Part No BSO211P
Manufacturer Infineon Technologies
Description Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:16118 pcs
Quantity Unit Price Ext. Price
1+ $0.43 $43
10+ $0.4214 $211
100+ $0.4085 $409
1000+ $0.3956 $396
10000+ $0.3784 $378
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage-20 V
Gate to Source Voltage (Vgs)12 V
MountSurface Mount
Current Rating-4.7 A
Fall Time23.3 ns
Turn-On Delay Time7.8 ns
RoHSCompliant
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)20 V
Power Dissipation2 W
Drain to Source Resistance67 mΩ
Continuous Drain Current (ID)4.7 A
Rise Time10.6 ns
Turn-Off Delay Time26.3 ns
PackagingTape & Reel
Number of Pins8
Input Capacitance920 pF
Voltage Rating (DC)-20 V
Rds On Max67 mΩ
Case/PackageSOIC
Max Power Dissipation2 W

Introduce

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