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BSC200P03LSGAUMA1

Part No BSC200P03LSGAUMA1
Manufacturer Infineon Technologies
Description MOSFET P-CH 30V 9.9/12.5A 8TDSON
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id48.5 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs2430 pF @ 15 V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)30 V
OperatingTemperature8-PowerTDFN
DriveVoltage(MaxRdsOn20mOhm @ 12.5A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType10V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
SeriesOptiMOS™
Qualification
SupplierDevicePackage±25V
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C9.9A (Ta), 12.5A (Tc)
Vgs(Max)2.5W (Ta), 63W (Tc)
MinRdsOn)2.2V @ 100µA
PackageTape & Reel (TR)
PowerDissipation(Max)PG-TDSON-8-1

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