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BSB012N03LX3 G

Part No BSB012N03LX3 G
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 39A/180A 2WDSON
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id2.2V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs169 nC @ 10 V
FETFeature2.8W (Ta), 89W (Tc)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeMG-WDSON-2, CanPAK M™
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackage3-WDSON
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C39A (Ta), 180A (Tc)
Vgs(Max)16900 pF @ 15 V
MinRdsOn)1.2mOhm @ 30A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-40°C ~ 150°C (TJ)

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