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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N7002ET/R
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2N7002ET/R

Part No 2N7002ET/R
Manufacturer Nexperia
Description -
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

Operating Temperature-55u00b0C ~ 150u00b0C (TJ)
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs0.69 nC @ 10 V
Current - Continuous Drain (Id) @ 25u00b0C385mA (Ta)
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250u00b5A
Supplier Device PackageTO-236AB
Drain to Source Voltage (Vdss)60 V
SeriesTrenchMOSu2122
Power Dissipation (Max)830mW (Ta)
Package / CaseTO-236-3, SC-59, SOT-23-3
TechnologyMOSFET (Metal Oxide)
MfrNexperia USA Inc.
Part StatusObsolete
Vgs (Max)u00b130V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
PackageTape & Reel (TR)

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